专利详情

专利名称	Method for forming gate structure, method for forming semiconductor device, and semiconductor device
申请号	US201213699734	专利类型	US
公开（公告）号	US8921171(B2)	公开（授权）日	2014.12.30
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yang Hong;Ma Xueli;Wang Wenwu;Han Kai;Wang Xiaolei;Yin Huaxiang;Yan Jiang
主分类号	H01L21/8238	IPC主分类号	H01L21/8238;H01L27/092
专利有效期	Method for forming gate structure, method for forming semiconductor device, and semiconductor device 至Method for forming gate structure, method for forming semiconductor device, and semiconductor device	法律状态
说明书摘要	A method for forming a gate structure, comprising: providing a substrate, where the substrate includes a nMOSFET area and a pMOSFET area, each of the nMOSFET area and the pMOSFET area has a gate trench, and each of the gate trenches is provided at a bottom portion with a gate dielectric layer; forming a gate dielectric capping layer on the substrate; forming an etching stop layer on the gate dielectric capping layer; forming an oxygen scavenging element layer on the etching stop layer; forming a first work function adjustment layer on the oxygen scavenging element layer; etching the first work function adjustment layer above the nMOSFET area; forming a second work function adjustment layer on the surface of the substrate; metal layer depositing and annealing to fill the gate trenches with a metal layer; and removing the metal layer outside the gate trenches.