专利详情

专利名称	Semiconductor structure and method for forming the same
申请号	US201113201827	专利类型	US
公开（公告）号	US8928089(B2)	公开（授权）日	2015.01.06
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Luo Zhijiong;Yin Haizhou
主分类号	H01L21/70	IPC主分类号	H01L21/70;H01L21/8238;H01L29/78
专利有效期	Semiconductor structure and method for forming the same 至Semiconductor structure and method for forming the same	法律状态
说明书摘要	A semiconductor structure and a method for forming the same are provided. The structure comprises a semiconductor substrate (100) with an nMOSFET region (102) and a pMOSFET region (104) on it. An nMOSFET structure and a pMOSFET structure are formed in the nMOSFET region (102) and the pMOSFET region (104), respectively. The nMOSFET structure comprises a first channel region (182) formed in the nMOSFET region (102) and a first gate stack formed in the first channel region (182). The nMOSFET structure is covered with a compressive-stressed material layer (130) to apply a tensile stress to the first channel region (182). The pMOSFET structure comprises a second channel region (184) formed in the pMOSFET region (104) and a second gate stack formed in the second channel region (184). The pMOSFET structure is covered with a tensile-stressed material layer (140) to apply a compressive stress to the second channel region (184).