专利详情

专利名称	Semiconductor field-effect transistor structure and method for manufacturing the same
申请号	US201113814973	专利类型	US
公开（公告）号	US8895374(B2)	公开（授权）日	2014.11.25
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhou Huajie;Xu Qiuxia
主分类号	H01L21/00	IPC主分类号	H01L21/00;H01L29/66;H01L21/84;H01L29/78
专利有效期	Semiconductor field-effect transistor structure and method for manufacturing the same 至Semiconductor field-effect transistor structure and method for manufacturing the same	法律状态
说明书摘要	The present application discloses a semiconductor Field-Effect Transistor (FET) structure and a method for manufacturing the same, wherein the method comprises: forming a semiconductor substrate comprising an SOI structure having a body-contact hole; forming a fin on the SOI structure of the semiconductor substrate; forming a gate stack structure on top and side faces of the fin; forming source/drain structures in the fin on both sides of the gate stack structure; and performing metallization. The present invention makes use of traditional quasi-planar based top-down processes, thus the manufacturing process thereof becomes simple to implement; the present invention exhibits good compatibility with CMOS planar process and can be easily integrated; the present invention also is favorable for suppressing short channel effects desirably, and boosts MOSFETs to develop towards a trend of downscaling size.