专利详情

专利名称	Semiconductor device and method for forming the same
申请号	US201113143931	专利类型	US
公开（公告）号	US8896062(B2)	公开（授权）日	2014.11.25
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong
主分类号	H01L27/12	IPC主分类号	H01L27/12;H01L21/84;H01L21/336;H01L27/088;H01L29/78;H01L29/66
专利有效期	Semiconductor device and method for forming the same 至Semiconductor device and method for forming the same	法律状态
说明书摘要	The invention provides a semiconductor device, including: a semiconductor base, on an insulation layer; source/drain regions abutting opposite first sides of the semiconductor base; and gates at opposite second sides of the semiconductor base, wherein the semiconductor base includes a cavity, and the insulation layer is exposed by the cavity. The invention also provides a method for forming a semiconductor device, including: forming a semiconductor bottom on an insulation layer; forming source/drain regions, the source/drain regions abutting opposite first sides of the semiconductor bottom; forming gates on opposite second sides of the semiconductor bottom; and removing a part of the semiconductor bottom to form a cavity in the semiconductor bottom, the cavity exposing the insulation layer. With the technical solutions provided by the invention, short-channel effects can be alleviated, and the resistance of the source/drain regions and parasitic capacitance can be reduced.