专利详情

专利名称	Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor
申请号	US201113698276	专利类型	US
公开（公告）号	US8895403(B2)	公开（授权）日	2014.11.25
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Liang Qingqing;Zhong Huicai;Zhu Huilong
主分类号	H01L21/00	IPC主分类号	H01L21/00;H01L21/02;H01L27/088;H01L21/8238;H01L21/84;H01L27/12
专利有效期	Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor 至Transistor, method for fabricating the transistor, and semiconductor device comprising the transistor	法律状态
说明书摘要	A transistor, a method for fabricating a transistor, and a semiconductor device comprising the transistor are disclosed in the present invention. The method for fabricating a transistor may comprise: providing a substrate and forming a first insulating layer on the substrate; defining a first device area on the first insulating layer; forming a spacer surrounding the first device area on the first insulating layer; defining a second device area on the first insulating layer, wherein the second device area is isolated from the first device area by the spacer; and forming transistor structures in the first and second device area, respectively. The method for fabricating a transistor of the present invention greatly reduces the space required for isolation, significantly decreases the process complexity, and greatly reduces fabricating cost.