专利详情

专利名称	Semiconductor device having gate structures to reduce the short channel effects
申请号	US201113121998	专利类型	US
公开（公告）号	US8816392(B2)	公开（授权）日	2014.08.26
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Liang Qingqing
主分类号	H01L29/66	IPC主分类号	H01L29/66;H01L33/00;H01L21/02
专利有效期	Semiconductor device having gate structures to reduce the short channel effects 至Semiconductor device having gate structures to reduce the short channel effects	法律状态
说明书摘要	A semiconductor device comprises a semiconductor substrate on an insulating layer; and a second gate that is located on the insulating layer and is embedded at least partially in the semiconductor substrate. A method for forming a semiconductor device comprises: forming a semiconductor substrate on an insulating layer; forming a void within the semiconductor substrate, with the insulating layer being exposed by the void; and forming a second gate, with the void being filled with at least one part of the second gate. It facilitates the reduction of the short channel effects, resistances of the source and drain regions, and parasitic capacitances.