专利详情

专利名称	Well region formation method and semiconductor base
申请号	US201113381636	专利类型	US
公开（公告）号	US8815698(B2)	公开（授权）日	2014.08.26
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Zhu Huilong;Luo Zhijiong
主分类号	H01L27/04	IPC主分类号	H01L27/04;H01L21/76;H01L21/8238;H01L29/16;H01L21/8234;H01L29/66
专利有效期	Well region formation method and semiconductor base 至Well region formation method and semiconductor base	法律状态
说明书摘要	A well region formation method and a semiconductor base in the field of semiconductor technology are provided. A method comprises: forming isolation regions in a semiconductor substrate to isolate active regions; selecting at least one of the active regions, and forming a first well region in the selected active region; forming a mask to cover the selected active region, and etching the rest of the active regions, so as to form grooves; and growing a semiconductor material by epitaxy to fill the grooves. Another method comprises: forming isolation regions in a semiconductor substrate for isolating active regions; forming well regions in the active regions; etching the active regions to form grooves, such that the grooves have a depth less than or equal to a depth of the well regions; and growing a semiconductor material by epitaxy to fill the grooves.