Semiconductor structure and method for manufacturing the same
- 申请号：US201113379357
- 专利类型：US
- 申请（专利权）人：中国科学院微电子研究所
- 公开(公开)号：US8809955(B2)
- 公开(公开)日：2014.08.19
- 法律状态：
- 出售价格： 面议 立即咨询
专利详情
| 专利名称 | Semiconductor structure and method for manufacturing the same | ||
| 申请号 | US201113379357 | 专利类型 | US |
| 公开（公告）号 | US8809955(B2) | 公开（授权）日 | 2014.08.19 |
| 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Zhu Huilong;Wu Binneng;Xiao Weiping;Wu Hao;Liang Qingqing |
| 主分类号 | H01L29/786 | IPC主分类号 | H01L29/786;H01L21/8236;H01L29/10;H01L29/66 |
| 专利有效期 | Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same | 法律状态 | |
| 说明书摘要 | Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects. | ||
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