专利详情

专利名称	Fin field-effect transistor and method for manufacturing the same
申请号	US201113377141	专利类型	US
公开（公告）号	US8859378(B2)	公开（授权）日	2014.10.14
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Liang Qingqing;Zhong Huicai;Zhu Huilong
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L27/12;H01L21/8234;H01L21/84;H01L27/088;H01L29/66
专利有效期	Fin field-effect transistor and method for manufacturing the same 至Fin field-effect transistor and method for manufacturing the same	法律状态
说明书摘要	Embodiments of the present invention disclose a method for manufacturing a Fin Field-Effect Transistor. When a fin is formed, a dummy gate across the fin is formed on the fin, a spacer is formed on sidewalls of the dummy gate, and a cover layer is formed on the first dielectric layer and on the fin outside the dummy gate and the spacer; then, an self-aligned and elevated source/drain region is formed at both sides of the dummy gate by the spacer, wherein the upper surfaces of the gate and the source/drain region are in the same plane. The upper surfaces of the gate and the source/drain region are in the same plane, making alignment of the contact plug easier; and the gate and the source/drain region are separated by the spacer, thereby improving alignment accuracy, solving inaccurate alignment of the contact plug, and improving device AC performance.