专利详情

专利名称	Method of manufacturing semiconductor device with well etched spacer
申请号	US201213700808	专利类型	US
公开（公告）号	US8883584(B2)	公开（授权）日	2014.11.11
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Meng Lingkuan
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L29/66
专利有效期	Method of manufacturing semiconductor device with well etched spacer 至Method of manufacturing semiconductor device with well etched spacer	法律状态
说明书摘要	A method of manufacturing a semiconductor device is disclosed. The method may comprise: forming a gate stack on a substrate; depositing a dielectric layer on the substrate and the gate stack; performing a main etching operation on the dielectric layer to form a spacer, with a remainder of the dielectric layer left on the substrate; and performing an over etching operation to remove the remainder of the dielectric layer. According to the method disclosed herein, two etching operations where an etching gas comprises a helium gas are performed, without forming an etching stop layer of silicon oxide. As a result, it is possible to reduce damages to the substrate and also to reduce the process complexity. Further, it is possible to optimize a threshold voltage, effectively reduce an EOT, and enhance a gate control capability and a driving current.