Transistor and method for forming the same
- 申请号：US201313961819
- 专利类型：US
- 申请（专利权）人：中国科学院微电子研究所
- 公开(公开)号：US8828820(B2)
- 公开(公开)日：2014.09.09
- 法律状态：
- 出售价格： 面议 立即咨询
专利详情
| 专利名称 | Transistor and method for forming the same | ||
| 申请号 | US201313961819 | 专利类型 | US |
| 公开（公告）号 | US8828820(B2) | 公开（授权）日 | 2014.09.09 |
| 申请（专利权）人 | 中国科学院微电子研究所 | 发明（设计）人 | Yin Haizhou;Zhu Huilong;Luo Zhijong |
| 主分类号 | H01L21/8238 | IPC主分类号 | H01L21/8238;H01L29/66;H01L29/32;H01L29/78;H01L29/417;H01L21/265;H01L29/51 |
| 专利有效期 | Transistor and method for forming the same 至Transistor and method for forming the same | 法律状态 | |
| 说明书摘要 | The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; a source region and a drain region located in the semiconductor substrate and on respective sides of the gate, wherein at least one of the source region and the drain region comprises at least one dislocation; an epitaxial semiconductor layer containing silicon located on the source region and the drain region; and a metal silicide layer on the epitaxial semiconductor layer. | ||
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