专利详情

专利名称	In-situ fabrication method for silicon solar cell
申请号	US201013699739	专利类型	US
公开（公告）号	US8871618(B2)	公开（授权）日	2014.10.28
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Xia Yang;Liu Bangwu;Li Chaobo;Liu Jie;Wang Minggang;Li Yongtao
主分类号	H01L21/26	IPC主分类号	H01L21/26;H01L31/18;C23C14/48;H01L21/223
专利有效期	In-situ fabrication method for silicon solar cell 至In-situ fabrication method for silicon solar cell	法律状态
说明书摘要	An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.