专利详情

专利名称	Transistor and method for manufacturing the same
申请号	US201113144903	专利类型	US
公开（公告）号	US8779514(B2)	公开（授权）日	2014.07.15
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Liang Qingqing;Zhong Huicai;Zhu Huilong
主分类号	H01L29/772	IPC主分类号	H01L29/772;H01L21/336
专利有效期	Transistor and method for manufacturing the same 至Transistor and method for manufacturing the same	法律状态
说明书摘要	The invention relates to a transistor and a method for manufacturing the transistor. The transistor according to an embodiment of the invention may comprise: a substrate which comprises at least a back gate of the transistor, an insulating layer and a semiconductor layer stacked sequentially, wherein the back gate of the transistor is used for adjusting the threshold voltage of the transistor; a gate stack formed on the semiconductor layer, wherein the gate stack comprises a gate dielectric and a gate electrode formed on the gate dielectric; a spacer formed on sidewalls of the gate stack; and a source region and a drain region located on both sides of the gate stack, respectively, wherein the height of the gate stack is lower than the height of the spacer. The transistor enables the height of the gate stack to be reduced and therefore the performance of the transistor is improved.