专利详情

专利名称	Semiconductor device and method for manufacturing the same
申请号	US201113142591	专利类型	US
公开（公告）号	US8772127(B2)	公开（授权）日	2014.07.08
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou;Zhong Huicai;Zhu Huilong;Luo Zhijiong
主分类号	H01L29/772	IPC主分类号	H01L29/772
专利有效期	Semiconductor device and method for manufacturing the same 至Semiconductor device and method for manufacturing the same	法律状态
说明书摘要	The present invention provides a semiconductor device and a method for manufacturing the same. The method for manufacturing the semiconductor device comprises: providing a silicon substrate having a gate stack structure formed thereon and having {100} crystal indices; forming an interlayer dielectric layer coving a top surface of the silicon substrate; forming a first trench in the interlayer dielectric layer and/or in the gate stack structure, the first trench having an extension direction being along <110> crystal direction and perpendicular to that of the gate stack structure; and filling the first trench with a first dielectric layer, wherein the first dielectric layer is a tensile stress dielectric layer. The present invention introduces a tensile stress in the transverse direction of a channel region by using a simple process, which improves the response speed and performance of semiconductor devices.