专利详情

专利名称	Semiconductor structure and method for manufacturing the same
申请号	US201113256866	专利类型	US
公开（公告）号	US8766371(B2)	公开（授权）日	2014.07.01
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Liang Qingqing;Luo Zhijiong;Yin Haizhou
主分类号	H01L21/70	IPC主分类号	H01L21/70
专利有效期	Semiconductor structure and method for manufacturing the same 至Semiconductor structure and method for manufacturing the same	法律状态
说明书摘要	There is provided a semiconductor structure and a method for manufacturing the same. The semiconductor structure according to the present invention comprises: a semiconductor substrate; a channel region formed on the semiconductor substrate; a gate stack formed on the channel region; and source/drain regions formed on both sides of the channel region and embedded in the semiconductor substrate. The gate stack comprises: a gate dielectric layer formed on the channel region; and a conductive layer positioned on the gate dielectric layer. For an nMOSFET, the conductive layer has a compressive stress to apply a tensile stress to the channel region; and for a pMOSFET, the conductive layer has a tensile stress to apply a compressive stress to the channel region.