专利详情

专利名称	P-type semiconductor device and method for manufacturing the same
申请号	US201113125710	专利类型	US
公开（公告）号	US8786032(B2)	公开（授权）日	2014.07.22
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Xu Gaobo;Xu Qiuxia
主分类号	H01L29/78	IPC主分类号	H01L29/78;H01L23/58
专利有效期	P-type semiconductor device and method for manufacturing the same 至P-type semiconductor device and method for manufacturing the same	法律状态
说明书摘要	The present application provides a p-type semiconductor device and a method for manufacturing the same. The structure of the device comprises: a semiconductor substrate; a channel region positioned in the semiconductor substrate; a gate stack which is positioned on the channel region comprising a gate dielectric layer and a gate electrode, wherein the gate dielectric layer is positioned on the channel region and the gate electrode is positioned on the gate dielectric layer; and source/drain regions positioned at the two sides of the channel region and embedded into the semiconductor substrate; wherein the element Al is distributed in at least one of the upper surface, the bottom surface of the gate dielectric layer and the bottom surface of the gate electrode. The embodiments of the present invention are applicable for manufacturing MOSFET.