专利详情

专利名称	Method for manufacturing semiconductor field effect transistor
申请号	US201113395743	专利类型	US
公开（公告）号	US8778744(B2)	公开（授权）日	2014.07.15
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhou Huajie;Xu Qiuxia
主分类号	H01L21/336	IPC主分类号	H01L21/336;H01L29/66;H01L29/78
专利有效期	Method for manufacturing semiconductor field effect transistor 至Method for manufacturing semiconductor field effect transistor	法律状态
说明书摘要	The present disclosure provides a method for manufacturing a semiconductor field effect transistor, comprising: forming a semiconductor substrate having a local Silicon-on-Insulator (SOI) structure, which comprises a local buried isolation dielectric layer; forming a fin on a silicon substrate above the local buried isolation dielectric layer; forming a gate stack structure on a top and on side faces of the fin; forming source/drain structures in the fin at both sides of the gate stack structure; and metallizing. The present disclosure uses a conventional top-to-bottom process based on quasi-plane, which has a good compatibility with CMOS planar processes. Also, the method can suppress short channel effects and help to reduce the dimensions of MOSFETs.