专利详情

专利名称	Phase change memory structure having low-K dielectric heat-insulating material and fabrication method thereof
申请号	US201113202955	专利类型	US
公开（公告）号	US8722455(B2)	公开（授权）日	2014.05.13
申请（专利权）人	中国科学院	发明（设计）人	SONG ZHITANG;WU LIANGCAI;FENG SONGLIN
主分类号	H01L21/06	IPC主分类号	H01L21/06;H01L21/20;H01L21/8258;H01L29/792
专利有效期	Phase change memory structure having low-K dielectric heat-insulating material and fabrication method thereof 至Phase change memory structure having low-K dielectric heat-insulating material and fabrication method thereof	法律状态
说明书摘要	The present invention discloses a phase change memory structure having low-k dielectric heat-insulating material and fabrication method thereof, wherein the phase change memory cell comprises diode, heating electrode, reversible phase change resistor, top electrode and etc; the heating electrode and reversible phase change resistor are surrounded by low-k dielectric heat-insulating layer; an anti-diffusion dielectric layer is designed between the reversible phase change resistor and the low-k dielectric heat-insulating layer surrounding thereof. The present invention utilizes low-k dielectric material as heat-insulating material, thereby avoiding thermal crosstalk and mutual influence during operation between phase change memory cells, enhancing the reliability of devices, and eliminating the influence of temperature, pressure and etc. on phase change random access memory (PCRAM) data retention during the change from amorphous to polycrystalline states. Furthermore, an anti-diffusion dielectric layer is prepared between the low-k dielectric material and the phase change material, which can be used to prevent the elements of the phase change material from diffusing to low-k dielectric material. The fabrication process of said phase change memory is compatible with standard complementary metal-oxide semiconductor (CMOS) process and the chemical mechanical polishing (CMP) process with low pressure and light corrosion is adopted in polishing.