专利详情

专利名称	Method for fabricating black silicon by using plasma immersion ion implantation
申请号	US201013699741	专利类型	US
公开（公告）号	US8703591(B2)	公开（授权）日	2014.04.22
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	XIA YANG;LIU BANGWU;LI CHAOBO;LIU JIE;WANG MINGGANG;LI YONGTAO
主分类号	H01L21/26	IPC主分类号	H01L21/26
专利有效期	Method for fabricating black silicon by using plasma immersion ion implantation 至Method for fabricating black silicon by using plasma immersion ion implantation	法律状态
说明书摘要	A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.