专利详情

专利名称	TCAD emulation calibration method of SOI field effect transistor
申请号	US201113696401	专利类型	US
公开（公告）号	US8667440(B2)	公开（授权）日	2014.03.04
申请（专利权）人	中国科学院上海微系统与信息技术研究所	发明（设计）人	CHAI ZHAN;CHEN JING;LUO JIEXIN;WU QINGQING;WANG XI
主分类号	G06F9/455	IPC主分类号	G06F9/455;G06F17/50
专利有效期	TCAD emulation calibration method of SOI field effect transistor 至TCAD emulation calibration method of SOI field effect transistor	法律状态
说明书摘要	A calibration method for a device using TCAD to emulation SOI field effect transistor, where process emulation MOS device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; the process emulation MOS device structures are calibrated according to a TEM test result, a SIMS test result, a CV test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor. Thereby, providing effective guidance for research, development and optimization of a new process flow are realized.