专利详情

专利名称	Semiconductor device structure and method for manufacturing the same
申请号	US201113380975	专利类型	US
公开（公告）号	US8652884(B2)	公开（授权）日	2014.02.18
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	ZHONG HUICAI;LIANG QINGQING
主分类号	H01L21/335	IPC主分类号	H01L21/335;H01L21/70
专利有效期	Semiconductor device structure and method for manufacturing the same 至Semiconductor device structure and method for manufacturing the same	法律状态
说明书摘要	The present invention proposes a semiconductor device structure and a method for manufacturing the same, and relates to the semiconductor manufacturing industry. The method comprises: providing a semiconductor substrate; forming gate electrode lines on the semiconductor substrate; forming sidewall spacers on both sides of the gate electrode lines; forming source/drain regions on the semiconductor substrates at both sides of the gate electrode lines; forming contact holes on the gate electrode lines or on the source/drain regions; and cutting off the gate electrode lines to form electrically isolated gate electrodes after formation of the sidewall spacers but before completion of FEOL process for a semiconductor device structure. The embodiments of the present invention are applicable for manufacturing integrated circuits.