专利详情

专利名称	Doped low-temperature phase barium metaborate single crystal, the manufacturing method thereof and wave changing elements therefrom
申请号	US200813055721	专利类型	US
公开（公告）号	US8514483(B2)	公开（授权）日	2013.08.20
申请（专利权）人	中国科学院福建物质结构研究所	发明（设计）人	CHEN CHANGZHANGHONG MAOCHUNLI DINGLIN HAINANCAI SHICON
主分类号	G02F1/355	IPC主分类号	G02F1/355;G02B6/00
专利有效期	Doped low-temperature phase barium metaborate single crystal, the manufacturing method thereof and wave changing elements therefrom 至Doped low-temperature phase barium metaborate single crystal, the manufacturing method thereof and wave changing elements therefrom	法律状态
说明书摘要	The present invention relates generally to the field of synthetic crystal, and more particularly, this invention relates to doped low-temperature phase barium metaborate single crystal, growth method and frequency-converter. Molten salt method was adopted. The single crystal completely overcome the shortcomings of BBO with strong deliquescence, almost no deliquescence; its frequency doubling effect and optical damage threshold has improved greatly compared with the BBO; its hardness increased significantly, the single crystal with Shore hardness of 101.3 and Mohs hardness of 6, however, BBO with Shore hardness of 71.2 and Mohs hardness of 4. From the UV-Vis region transmittance curves tests, the cut-off wavelength of the single crystal is 190 nm, wavelength of absorption onset is 205 nm. BBSAG is widely applied in the fields of laser and nonlinear optics, and in terms of frequency-converter of ultraviolet and deep-ultraviolet due to its excellent properties better than BBO.