专利详情

专利名称	High-purity tellurium dioxide single crystal and manufacturing method thereof
申请号	US201013262209	专利类型	US
公开（公告）号	US8480996(B2)	公开（授权）日	2013.07.09
申请（专利权）人	中国科学院上海硅酸盐研究所	发明（设计）人	GE ZENGWEIZHU YONGWU GUOGINGYIN XUEJITANG LINYAOZHAO HANBINGU LIZHE
主分类号	C01B19/04	IPC主分类号	C01B19/04;C30B11/02;C30B15/00
专利有效期	High-purity tellurium dioxide single crystal and manufacturing method thereof 至High-purity tellurium dioxide single crystal and manufacturing method thereof	法律状态
说明书摘要	A high-purity tellurium dioxide (TeO2) single crystal and its manufacturing method are provided. The method comprises the following procedures: firstly performing a first single crystal growth, and then dissolving the resulting single crystal again, thereafter adding a precipitation agent to form powder, and finally performing a second single crystal growth of as-prepared powder to obtain the high purity single crystal. The TeO2 single crystal prepared according to present invention is of high purity, especially with a content of radioactive impurities such as U and Th decreased to a level of 10-13 g/g.