专利详情

专利名称	Semiconductor device having fins of different heights and method for manufacturing the same
申请号	US201113634266	专利类型	US
公开（公告）号	US9496178(B2)	公开（授权）日	2016.11.15
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Zhu Huilong;Yin Haizhou;Luo Zhijiong
主分类号	H01L29/76	IPC主分类号	H01L29/76;H01L21/8234
专利有效期	Semiconductor device having fins of different heights and method for manufacturing the same 至Semiconductor device having fins of different heights and method for manufacturing the same	法律状态
说明书摘要	The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer; a first fin being formed by patterning the semiconductor layer; and a second fin being formed by patterning the semiconductor layer, wherein: top sides of the first and second fins have the same height; bottom sides of the first and second fins adjoin the semiconductor layer; and the second fin is higher than the first fin. According to the present disclosure, a plurality of semiconductor devices with different dimensions can be integrated on the same wafer. As a result, manufacturing process can be shortened and manufacturing cost can be reduced. Furthermore, devices with different driving capabilities can be provided.