专利详情

专利名称	MOSFET structure and manufacturing method thereof
申请号	US201314905440	专利类型	US
公开（公告）号	US9496342(B2)	公开（授权）日	2016.11.15
申请（专利权）人	中国科学院微电子研究所	发明（设计）人	Yin Haizhou
主分类号	H01L21/8234	IPC主分类号	H01L21/8234;H01L29/10;H01L29/66;H01L29/78;H01L21/02;H01L21/308;H01L29/08;H01L29/165
专利有效期	MOSFET structure and manufacturing method thereof 至MOSFET structure and manufacturing method thereof	法律状态
说明书摘要	A MOSFET and a method for manufacturing the same are disclosed. The method comprises: a. providing a substrate (100), a dummy gate structure (200), a epitaxial protection layer (101) and a sacrificial spacer (205); b. covering the dummy gate structure (200) and the substrate (100) on one side thereof by a mask layer, and forming a vacancy (102) in the substrate; c. growing a semiconductor layer (300) on the semiconductor structure to fill in the vacancy (102); d. removing the epitaxial protection layer (101) and the sacrificial spacer (205), and sequentially forming source/drain extension regions, a spacer (201), source/drain regions, and an interlayer dielectric layer (500); and e. removing the dummy gate structure (200) to form a dummy gate vacancy, and forming a gate stack in the dummy gate vacancy. In the MOSFET structure of the present disclosure, negative effects of DIBL on device performance can be effectively reduced.