专利详情

专利名称	Mram based on vertical current writing and its control method
申请号	US20040599514	专利类型	US
公开（公告）号	US2007183186	公开（授权）日	2007.08.09
申请（专利权）人	中国科学院物理研究所	发明（设计）人	PENG ZILONG (CN);HAN XIUFENG (CN);ZHAO SUFEN (CN);WANG WEINING (CN);ZHAN WENSHAN (CN)
主分类号	G11C11/00	IPC主分类号	G11C11/00;G11C7/00;G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/00;H01L27/22;G11C11/02;H01L21/70
专利有效期	Mram based on vertical current writing and its control method 至Mram based on vertical current writing and its control method	法律状态
说明书摘要	The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.