专利详情

专利名称	Two-phase thermal method for preparation of cadmium sulfide quantum dots
申请号	US20050158111	专利类型	US
公开（公告）号	US2007004183	公开（授权）日	2007.01.04
申请（专利权）人	中国科学院长春应用化学研究所	发明（设计）人	WANG QIANG (CN);PAN DAOCHENG (CN);JI XIANGLING (CN);JIANG SHICHUN (CN);AN LIJIA (CN)
主分类号	H01L21/20	IPC主分类号	H01L21/20;H01L21/02
专利有效期	Two-phase thermal method for preparation of cadmium sulfide quantum dots 至Two-phase thermal method for preparation of cadmium sulfide quantum dots	法律状态
说明书摘要	The present invention relates to a two-phase thermal method for the preparation of cadmium sulfide quantum dots. In the method, cadmium carboxylate containing 2 to 18 carbon atoms or cadmium oxide is selected as cadmium source; thiourea or thioacetamide is selected as sulfur source; oleic acid or trioctylphosphine oxide (TOPO) is selected as capping agent, and molar ratio of cadmium source to sulfur source is in a range of from 10:1 to 1:10, and molar ratio of cadmium source to capping agent is in a range of from 1:7 to 1:25. Water and water-insoluble organic compound in equal or similar volume are used as solvents forming a two-phase system. The mixture is heated at 120-180 DEG C. in an autoclave for 0.5 to 24 hrs. By means of varying reaction time, cadmium sulfide quantum dots of different sizes could be prepared. Alternatively, it is also feasible to use quantum dots already obtained as crystal seeds in the reaction of newly added reaction precursor to give larger sized quantum dots with a size distribution similar to that of the initial crystal seeds so as to realize the control of quantum dot size. The quantum dots obtained in the present invention have relatively narrow size distribution, emit royal purple or blue light under ultraviolet lamp, with a photoluminescence quantum efficiency of from 3 to 60%.