专利详情

专利名称	Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof
申请号	US20030645642	专利类型	US
公开（公告）号	US2004155239	公开（授权）日	2004.08.12
申请（专利权）人	中国科学院长春应用化学研究所	发明（设计）人	WANG JUN (CN); YAN DONGHANG (CN); ZHANG JIAN (CN)
主分类号	H01L35/24	IPC主分类号	H01L35/24
专利有效期	Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof 至Field effect transistor in sandwich configuration having organic semiconductors and manufacturing process thereof	法律状态
说明书摘要	A field effect transistor in sandwiched configuration having organic semiconductor, comprising: a substrate (1), a gate electrode (2) formed on the surface of the substrate (1), a gate insulation layer (3) formed on the substrate (1) and the gate insulation layer (2), which is characterized in that, further comprising: an active layer (4) formed on the gate insulation layer (3) but leaving a part of the gate insulation layer (3) to be exposed, a source and drain electrodes (5) formed on a part of the gate insulation layer (3) and a part of the active layer (4), and an active layer (6) formed on the exposed part of the gate insulation layer (3), the active layer (4), the source electrode and the drain electrode (5). Taking full advantage of that the organic semiconductor can be processed under low temperature, the present invention adopts two or more kinds of materials to form the active semiconductor layer to make the active layer good contact with the source/drain electrode more effectively and reduce the threshold voltage of the device, and contact the semiconductor with the source/drain electrode and the insulation layer closely and tightly.