专利详情

专利名称	Parallel plate diode
申请号	US20020049486	专利类型	US
公开（公告）号	US6768177	公开（授权）日	2004.07.27
申请（专利权）人	中国科学院生物物理研究所	发明（设计）人	JIANG LING (CN); XU QIANG (CN); XU YELIN (CN)
主分类号	H01L29/76	IPC主分类号	H01L29/76
专利有效期	Parallel plate diode 至Parallel plate diode	法律状态
说明书摘要	A parallel plate diode comprising metal electrodes and semiconductor materials layer contacting said metal electrodes. Two thin plate electrodes made of metal are disposed in parallel, and there is a layer of thin plate semiconductor material sandwiched between the two thin plate electrodes, the concentration of the carriers in the semiconductor material layer is 20% or less than that of the electrons in the metal. One of the metal electrodes is made so as to have a plurality of recesses from its surface into the interior on the side that faces the semiconductor coat layer, the diameter of those recesses is less than 4 micrometers. These recesses are well-shape cavities and an array of the convex portions and concave portions are staggered each other. The cross section of the well shape is circular, square or rectangle. This diode output a current and a voltage in a closed loop circuit without bias voltage or bias current.