专利详情

专利名称	Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof
申请号	US20030614987	专利类型	US
公开（公告）号	US6806492	公开（授权）日	2004.10.19
申请（专利权）人	中国科学院长春应用化学研究所	发明（设计）人	YAN XUANJUN (CN); WANG HAIBO (CN); WANG JUN (CN); YAN DONGHANG (CN); ZHANG JIAN (CN)
主分类号	H01L35/24	IPC主分类号	H01L35/24;H01L51/40
专利有效期	Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof 至Heterojunction organic semiconductor field effect transistor (FET) with a gate insulation layer and manufacturing process thereof	法律状态
说明书摘要	A organic semiconductor field effect transistor that can work in the depletion mode or super-inverse mode, comprising: a substrate (1), a gate electrode (2) formed on the substrate (1), a gate insulation layer (3) formed on the substrate (1) and the gate electrode (2), a first semiconductor layer (4) formed on the gate insulation layer (3), a source electrode and a drain electrode (5) formed on the first semiconductor layer (4), and a second semiconductor layer (6) formed on the first semiconductor layer (4) and the source/drain electrodes (5).